Measurement Accuracy of Nitrogen Concentration in Czochralski Silicon Crystal
نویسندگان
چکیده
منابع مشابه
Numerical Modeling of Czochralski Silicon Crystal Growth
Modeling of heat transfer is presented for the entire Czochralski Si-growth furnace. The axisymmetric steady-state approach with moving computational grids is used. Melt turbulent flow, inert gas flow, heat transfer in solid parts, and radiative heat transfer in the system are considered. The Reynolds-averaged Navier-Stokes equations written with the Boussinesq approximation and the energy equa...
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Single crystal silicon has played the fundamental role in electronic industry since the second half of the 20th century and still remains the most widely used material. Electronic devices and integrated circuits are fabricated on single-crystal silicon wafers which are produced from silicon crystals grown primarily by the Czochralski (CZ) technique. Various defects are formed in the growing cry...
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The microsegregation behaviour of antimony in the faceted and non-faceted Czochralski silicon crystal growth was analyzed quantitatively. Using small melt heights and no rotation, dopant striations of various small spacings were eliminated. Interface demarcation and spreading resistance measurements were used for the segregation analysis. The dopant concentration and its fluctuation during the ...
متن کاملNitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
Dislocation locking experiments have been used to investigate nitrogen-doped float-zone silicon (NFZ-Si). Experiments on NFZ-Si with a nitrogen concentration of 2.2 × 10 cm were carried out at different annealing temperatures (550–830 °C) for different annealing times (0–1500 hours) and experiments on NFZ-Si with a nitrogen concentration of 3 × 10 cm were carried out at 600 °C for 0–1200 hours....
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We report on the Czochralski method for single silicon crystal growth and discuss heat and mass transfer and defect formation in the crystal. A re ector was used for separation of the heating and cooling areas in the furnace enabling us to speed up crystal growth. The melt ow to stabilize the temperature distribution in a crucible was controlled using transverse magnetic elds in a large-scale s...
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ژورنال
عنوان ژورنال: SHINKU
سال: 2003
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.46.166